Apostolopoulos George
George Apostolopoulos received his BSc (1991) and PhD (1997) degrees from the Physics Department of the National University of Athens, Greece. He has worked at the Paul-Drude Institut, Berlin (1997-2000) and the Institute of Materials Science of NCSR "Demokritos" (2000-2003). During this period his work has been mainly devoted to the growth and characterization of semiconductor materials and devices. In 2004 he joined the Institute of Nuclear Technology and Radiation Protection of NCSR "Demokritos" as a research associate, working on the development and application of neutron and X-ray scattering techniques in the characterization of materials. Since 2008 he is a researcher of the Institute. His current research focuses on the properties of materials for future fusion energy systems and particularly on the effects of radiation damage and recovery.
Publications
2006
Giapintzakis, J., Androulakis, J., Syskakis, E., Papageorgiou, Th. P., Apostolopoulos, G., Thanos, S., & Papastaikoudis, C. (2006). Influence of the nonmagnetic impurities on the spin‐1 Heisenberg chain SrNi2V2O8 system. Physica Status Solidi (b), 243 (6), 1366–1374. doi:10.1002/pssb.200541030
2005
Mereu, B., Dimoulas, A., Vellianitis, G., Apostolopoulos, G., Scholz, R., & Alexe, M. (2005). Interface trap density in amorphous La2Hf2O7/SiO2 high-κ gate stacks on Si. Applied Physics A, 80 (2), 253–257. doi:10.1007/s00339-004-2910-9
2004
Dimoulas, A., Vellianitis, G., Mavrou, G., Apostolopoulos, G., Travlos, A., Wiemer, C., Fanciulli, M., & Rittersma, Z. M. (2004). La2Hf2O7 high-κ gate dielectric grown directly on Si(001) by molecular-beam epitaxy. Applied Physics Letters, 85 (15), 3205–3207. doi:10.1063/1.1806556
Mavrou, G., Vellianitis, G., Apostolopoulos, G., Argyropoulos, K., Dimoulas, A., & Scholz, R. (2004). Si overgrowth on Y2O3 (1 1 0)/Si (0 0 1) by molecular beam epitaxy. Materials Science and Engineering: B, 109 (1–3), 39–41. doi:10.1016/j.mseb.2003.10.024
Travlos, A., Boukos, N., Apostolopoulos, G., Dimoulas, A., & Giannakopoulos, C. (2004). EELS study of oxygen superstructure in epitaxial Y2O3 layers. Materials Science and Engineering: B, 109 (1–3), 52–55. doi:10.1016/j.mseb.2003.10.026
Mereu, B., Sarau, G., Dimoulas, A., Apostolopoulos, G., Pintilie, I., Botila, T., Pintilie, L., & Alexe, M. (2004). Electrical properties of metal–oxide–silicon structures with LaAlO3 as gate oxide. Materials Science and Engineering: B, 109 (1–3), 94–98. doi:10.1016/j.mseb.2003.10.054
Vellianitis, G., Apostolopoulos, G., Mavrou, G., Argyropoulos, K., Dimoulas, A., Hooker, J. C., Conard, T., & Butcher, M. (2004). MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement. Materials Science and Engineering: B, 109 (1–3), 85–88. doi:10.1016/j.mseb.2003.10.052
Apostolopoulos, G., Vellianitis, G., Dimoulas, A., Hooker, J. C., & Conard, T. (2004). Complex admittance analysis for La2Hf2O7/SiO2 high-κ dielectric stacks. Applied Physics Letters, 84 (2), 260–262. doi:10.1063/1.1639942
2003
Travlos, A., Boukos, N., Apostolopoulos, G., & Dimoulas, A. (2003). Oxygen vacancy ordering in epitaxial layers of yttrium oxide on Si (001). Applied Physics Letters, 82 (23), 4053–4055. doi:10.1063/1.1581985
2002
Apostolopoulos, G., Vellianitis, G., Dimoulas, A., Alexe, M., Scholz, R., Fanciulli, M., Dekadjevi, D. T., & Wiemer, C. (2002). High epitaxial quality Y2O3 high-κ dielectric on vicinal Si(001) surfaces. Applied Physics Letters, 81 (19), 3549–3551. doi:10.1063/1.1519727
Travlos, A., Boukos, N., Apostolopoulos, G., Aidinis, C. J., & Bischoff, L. (2002). Epitaxial erbium silicide on Ge+ implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 196 (1–2), 174–179. doi:10.1016/s0168-583x(02)01287-9
Mereu, B., Vellianitis, G., Apostolopoulos, G., Dimouls, A., & Alexe, M. (n.d.). Fowler-Nordheim tunneling in epitaxial yttrium oxide on silicon for high-k gate applications. Proceedings. International Semiconductor Conference, 2, 309–312. doi:10.1109/smicnd.2002.1105856
Vellianitis, G., Apostolopoulos, G., Dimoulas, A., Argyropoulos, K., Mereu, B., Scholz, R., Alexe, M., & Hooker, J. C. (2002). Structural Quality and Electrical Behavior of Epitaxial High-k Y2O3 / Si(001). MRS Proceedings, 747. doi:10.1557/proc-747-t7.10/n9.10
Herfort, J., Preobrazhenskii, V. V., Boukos, N., Apostolopoulos, G., & Ploog, K. H. (2002). Increased epitaxial thickness limit in low-temperature GaAs grown on a vicinal substrate. Physica E: Low-Dimensional Systems and Nanostructures, 13 (2–4), 1190–1194. doi:10.1016/s1386-9477(02)00333-8
Tsamakis, D., Sargentis, C., Apostolopoulos, G., & Boukos, N. (2002). Growth and electrical characterisation of highly doped p-SiGe/Si heterostructures. Materials Science and Engineering: B, 89 (1–3), 221–224. doi:10.1016/s0921-5107(01)00859-5
Travlos, A., Apostolopoulos, G., Boukos, N., Katiniotis, C., & Tsamakis, D. (2002). Epitaxial ErSi2−x on strained and relaxed Si1−xGex. Materials Science and Engineering: B, 89 (1–3), 382–385. doi:10.1016/s0921-5107(01)00835-2
Apostolopoulos, G., Boukos, N., Herfort, J., Travlos, A., & Ploog, K. H. (2002). Surface morphology of low temperature grown GaAs on singular and vicinal substrates. Materials Science and Engineering: B, 88 (2–3), 205–208. doi:10.1016/s0921-5107(01)00905-9