Apostolopoulos George

Senior Researcher

Personal ORCID page

gapost@ipta.demokritos.gr

+30 210 6503731

George Apostolopoulos received his BSc (1991) and PhD (1997) degrees from the Physics Department of the National University of Athens, Greece. He has worked at the Paul-Drude Institut, Berlin (1997-2000) and the Institute of Materials Science of NCSR "Demokritos" (2000-2003). During this period his work has been mainly devoted to the growth and characterization of semiconductor materials and devices. In 2004 he joined the Institute of Nuclear Technology and Radiation Protection of NCSR "Demokritos" as a research associate, working on the development and application of neutron and X-ray scattering techniques in the characterization of materials. Since 2008 he is a researcher of the Institute. His current research focuses on the properties of materials for future fusion energy systems and particularly on the effects of radiation damage and recovery.

Publications

2000

Herfort, J., Apostolopoulos, G., Ulrici, W., Daweritz, L., & Ploog, K. H. (n.d.). Control of non-stoichiometry of low-temperature-grown III-V semiconductors using in situ reflectance difference spectroscopy. 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046), 77–80.  doi:10.1109/sim.2000.939201
Apostolopoulos, G., Herfort, J., Däweritz, L., Ploog, K. H., & Luysberg, M. (2000). Reentrant Mound Formation in GaAs(001) Homoepitaxy Observed byex situ Atomic Force Microscopy. Physical Review Letters, 84 (15), 3358–3361.  doi:10.1103/physrevlett.84.3358
Herfort, J., Apostolopoulos, G., Friedland, K.-J., Kostial, H., Ulrici, W., Däweritz, L., Leitner, M., Glas, P., & Ploog, K. H. (2000). In Situ Controlled Growth of Low-Temperature GaAs and Its Application  for Mode-Locking Devices. Japanese Journal of Applied Physics, 39 (4S), 2452.  doi:10.1143/jjap.39.2452